倪贤锋

姓名：倪贤锋

性别：男

党派：

职称：研究员

联系方式：103200036@seu.edu.cn

研究方向:

1、 超宽禁带半导体材料（AlN、金钢石等）的材料制备与性能研究

2、 氮化物半导体材料与相关器件的研究

教育背景

2004-2010, Virginia Commonwealth University,电子工程博士

2001-2004, 浙江大学, 材料科学硕士

1997-2001, 浙江大学, 材料科学学士

工作履历

01/2019 – 至今, 东南大学苏州校区下一代半导体材料研究所，研究员

04/2016 – 12/2017, 美国Lumileds LLC, 工程经理

07/2012 – 04/2016, 美国Philips Lumileds Lighting Company, 资深工艺工程师

05/2010 –7/2012, 美国Xepix Corporation, 研发工程师

获奖情况

2020年，苏州市工业园区青年国际型学科领军人才

2009年，国家留学基金委颁发的”国家优秀自费留学生奖学金”

科研成果

发表60多篇关于氮化镓外延与器件的论文，引用次数超过1400次。>13项中国与美国发明专利，>10项实用新型专利

代表性论文

1. X. Ni, Q. Fan, B. Hua, P. Sun, Z. Cai, H. Wang, C.N. Huang and X. Gu, “Improvement of AlN material quality by high-temperature annealing toward power diodes”, IEEE Transactions on Electron Devices, doi: 10.1109/TED.2020.2991397 (May 2020)

2. X. Ni, Q. Fan, R. Shimada, Ü. Özgür, and H. Morkoç, “Reduction of efficiency droop in InGaN light-emitting-diodes by coupled quantum wells”, Applied Physics Letters, 93, 171113 (2008).

3. X. Ni, M. Wu, J. Lee, X. Li, A. A. Baski, Ü. Özgür, and H. Morkoç, Non-polar m-plane GaN on patterned Si(112) substrates by metalorganic chemical vapor deposition, Applied Physics Letters, 95, 111102 (2009).

4. X. Ni, M. Wu, R. Shimada, X. Li, J. H. Leach, A. A. Baski, Ü. Özgür, and H. Morkoç, “Internal quantum efficiency of c-plane InGaN and m-plane InGaN on Si and GaN”, Applied Physics Letters, 95, 101106 (2009).

5. X. Ni, X. Li, J. Lee, S. Liu, V. Avrutin, Ü. Özgür, H. Morkoç, A. Matulionis, “The effect of hot electron and its energy relaxation on the efficiency of InGaN light emitting diodes”, Journal of Applied Physics, 108, 033112 (2010).

6. J. Xie, X. Ni, Q. Fan, R. Shimada, Ü. Özgür and Hadis Morkoç, “On the efficiency droop in InGaN MQW blue LEDs and its reduction with p-doped quantum well barriers”, Applied Physics Letters, 93, 121107 (2008).

7. J.H. Leach, X. Ni, X. Li, M. Wu, Ü. Özgür, H. Morkoç, L. Zhou, D.A. Cullen, D.J. Smith, H. Cheng, Ç. Kurdak, J.R. Meyer, and  I. Vurgaftman, Bias dependant two-channel conduction in InAlN/AlN/GaN structures”, Journal of Applied Physics, 107, 083706 (2010).

8. M. Wu, J. H. Leach, X. Ni, X. Li, J. Xie, Ü. Özgür, S. Dogan and H. Morkoç, InAlN/GaN Heterostructure Field-Effect Transistors on Fe-doped Freestanding GaN Substrates”, Journal of Vacuum Science & Technology B  Volume: 28, Issue: 5   Pages: 908-911   DOI: 10.1116/1.3481138   Published: SEP-OCT 2010.